000 00666nam a2200265Ia 4500
005 20260121165212.0
008 008 260114s9999 xx 000 0 eng d
020 _a9783662496831
037 _aEBOOK
040 _aCRL
040 _beng
040 _cCRL
041 _2eng
041 _aeng
084 _qCRL
100 _aZhiqiang Li
_91048780
245 4 _aThe Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
260 _bSpringer
260 _bSpringer
260 _c2016
856 _uhttps://link.springer.com/openurl?genre=book&isbn=978-3-662-49683-1
942 _cEBOOK
999 _c1614505
_d1614505