| 000 | 00694nam a2200265Ia 4500 | ||
|---|---|---|---|
| 003 | OSt | ||
| 005 | 20220912151350.0 | ||
| 006 | a|||||r|||| 00| 0 | ||
| 007 | ta | ||
| 008 | 220909b |||||||| |||| 00| 0 eng d | ||
| 024 | _a36502 | ||
| 037 | _cTextual | ||
| 040 |
_aCSL _beng _cCSL |
||
| 041 | _aeng | ||
| 082 | _aD65,4,T:4, M1 | ||
| 100 | _aSiliconix Inc. | ||
| 245 | 0 | _aDesigning with field effect transistors | |
| 260 |
_aNew York _b McGraw Hill _c1981 |
||
| 300 |
_aix, 291p. _ccm. |
||
| 650 | _a Telecommunication | ||
| 650 | _a Transistor | ||
| 650 | _aCommunication | ||
| 942 |
_hD65,4,T:4, M1 _cTEXL _2CC |
||
| 999 |
_c67086 _d67086 |
||