Analytical modeling and simulation of gate electrode workfunction and dielectric engineered recessed channel mosfet in sub-100 nm regime

Chaujar Rishu

Analytical modeling and simulation of gate electrode workfunction and dielectric engineered recessed channel mosfet in sub-100 nm regime Chaujar Rishu; Dr. Mridula Gupta Gu.; Prof. R. S. Gupta Gu. - 2008 - 196p. p. cm.

91615

Theses


ELECTRICAL ENGINEERING