APA
Abhinav Kranti, University of Delhi. Faculty of Technology. Department of Electronic Science, Prof R S Gupta Gu & University of Delhi. Faculty of Technology. Department of Electronic Science. (2001). Two dimensional modeling and characterization of short channel vertical cylindrical/surrounding gate SOI MOSFETs (CGT/SGT) for ULSI circuit applications. : .
Chicago
Abhinav Kranti, University of Delhi. Faculty of Technology. Department of Electronic Science, Prof R S Gupta Gu and University of Delhi. Faculty of Technology. Department of Electronic Science. 2001. Two dimensional modeling and characterization of short channel vertical cylindrical/surrounding gate SOI MOSFETs (CGT/SGT) for ULSI circuit applications. : .
Harvard
Abhinav Kranti, University of Delhi. Faculty of Technology. Department of Electronic Science, Prof R S Gupta Gu and University of Delhi. Faculty of Technology. Department of Electronic Science. (2001). Two dimensional modeling and characterization of short channel vertical cylindrical/surrounding gate SOI MOSFETs (CGT/SGT) for ULSI circuit applications. : .
MLA
Abhinav Kranti, University of Delhi. Faculty of Technology. Department of Electronic Science, Prof R S Gupta Gu and University of Delhi. Faculty of Technology. Department of Electronic Science. Two dimensional modeling and characterization of short channel vertical cylindrical/surrounding gate SOI MOSFETs (CGT/SGT) for ULSI circuit applications. : . 2001.
TextLanguage: English Publication details: 2001Subject(s):