TCAD Based Investigation of Advanced High Electron Mobility Transistor (HEMT) Structures for High Power and High Frequency Applications

By: Contributor(s): Material type: TextTextLanguage: English Publication details: Delhi University of Delhi. Faculty of Inter- Disciplinary & Applied Science. Deptt. of Electronics Science 2022Description: 189pSubject(s): Other classification:
Item type: Thesis
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Thesis Thesis Arts Library Arts Library Not for loan TH0026719

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