Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond
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TextLanguage: English Publication details: Springer; Springer; 2019ISBN: - 9789811500466
eBooks
| Item type | Current library | Home library | Status | Barcode | |
|---|---|---|---|---|---|
eBooks
|
Central Library | Central Library | Available | CL1752850 |
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Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond
APA
Guilei Wang, .Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond. : Springer.
Chicago
Guilei Wang, .Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond. : Springer.
Harvard
Guilei Wang, .Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond. : Springer.
MLA
Guilei Wang, .: Springer. .
