Analytical modeling and simulation of gate dielectric and gate material engineered trapezoidal recessed chanel mosfet in sub 100 nm regime Malik Priyanka; Gupta Mridula Gu.

By: Contributor(s): Material type: TextTextLanguage: English Publication details: 2011Description: 476p. p. cmSubject(s):
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Dissertations Dissertations Central Library Central Library Available TH0019019

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