Experimental study of metal contacts on AIGaN/GaN HEMTs for device DC & RF characteristics improvement and their response under Gamma Radiation

By: Contributor(s): Material type: TextTextLanguage: English Publication details: Delhi University of Delhi. Faculty of Interdisciplinary & Applied Sciences. Department of Electronics Science 2022Description: 160pOther classification:
Item type: Thesis
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Thesis Thesis Central Library Central Library Not for loan TH0026439

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