Analytical modeling and simulation of gate electrode workfunction and dielectric engineered recessed channel mosfet in sub-100 nm regime Chaujar Rishu; Dr. Mridula Gupta Gu.; Prof. R. S. Gupta Gu.

By: Contributor(s): Material type: TextTextLanguage: English Publication details: 2008Description: 196p. p. cmSubject(s):
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Dissertations Dissertations Central Library Central Library Available TH0015834

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